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ECRIS99

ABSTRACTS

Highly Charged Ion Production Using an Electrode in Biased and Floating Modes

S. Biri2, T. Nakagawa1, M. Kidera1, L. Kenez2, A. Valek2 and Y. Yano1
1) The Institute of Physical and Chemical Research (RIKEN) Hirosawa 2-1, Wako, Saitama 351-01, Japan,
2) Institute of Nuclear Research (ATOMKI), H-4026 Debrecen, Bem ter 18/c, Hungary


One of the most popular ways to obtain higher beam intensities in ECR ion sources is to install an electrode (usually disc) into the plasma chamber. Examined this method in detail we found that majority of the groups observed the beam intensity improvement by supplying a suitable biased voltage to the electrode and an electron current was injected into the plasma. A few groups observed the enhancement, however, when the electrode operated at floating potential - without being an electron donor. Only a few (and sometimes contradictionary) information was found on the optimised properties of the electrodes, i.e. position, dimension, shape, material.

In spite of the great success of the "biased-disc" method, the mechanism is still not completely clear. In this contribution, as one step of understanding, we examine what condition we observed the above mentioned two modes. The experiments were performed at the 18 GHz RIKEN and at the 14.5 GHz ATOMKI ECR ion sources.

It was found that effect of the electrode is strongly depends on the local plasma parameters and on the position of the electrode. At certain mirror ratios and electrode positions we needed to negatively bias the electrode and inject electrons into the plasma. The electrode operated as an electron source (Electron Donor ED mode). At higher mirror ratios and other axial positions the electrode works by directly changing the plasma potential dip (Potential Tuner PT mode). These two modes were checked and successfully found both in continuos and in pulsed mode operation. In both (ED and PT) modes we generated higher highly charged ion currents in the RIKEN-ECRIS than without the electrode.

Presenting Author : Biri S.
Presentation : Oral
Tuesday 11:30